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30 Οκτ 2024 · DRAM Latency Calculator. On this page, you'll find a tool designed to help you calculate the precise nanosecond timing of computer memory and convert these timings across different MT/s (Mega Transfers per second) ratings. Memory speeds are sometimes listed as "MHz," but this can be a bit misleading, you should always use MT/s when talking ...
12 Απρ 2022 · The best approximation YOU can make is eA/d where A is the surface area of the inner electrode. Of course you don't really know d and you don't really know e. Those who have access to a complete chip analysis can do a bit better.
8 Νοε 2019 · The DRAM capacitor, which consists of a metal–insulator–metal (MIM) structure, requires low leakage current density and high capacitance density for robust operations (e.g., read, write, and refresh).
20 Οκτ 2022 · When developing a DRAM device, an array of holes used for capacitive charge storage must be etched into the silicon wafer. The available patterning schemes to manufacture a 40 nm hole array include EUV LE, LE4, double SADP (80 nm mandrel pitch), and double SAQP (160 nm mandrel pitch).
5 Μαΐ 2021 · Today we announced solutions that support three key levers of DRAM scaling: a new hard mask material for the cell array capacitors, a low-k dielectric material for the interconnect wiring, and the adoption of high-k metal gate (HKMG) transistors in the periphery logic of the chip.
15 Νοε 2016 · DRAMSpec consists of four different modules: (1) a DRAM bank model, (2) a timing parameters calculator, (3) a current (power) specifications calculator and (4) an area calculator, as seen in Fig. 3. In addition to the output printed on the terminal, DRAMSpec generates two JSON files: a DRAM timing parameters file and a DRAM current parameters file.
30 Οκτ 2024 · DRAM cell capacitance has been decreased on and on as device scales, and D1z and D1a cell capacitances are now lower than 10 fF/cell. The high-k dielectric layer thickness was shrunk as well down to 7 or 6 nm to increase the capacitance.
