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Thermal characterization parameter, such as ΨJT and ΨJB, are the thermal metrics defined by the Solid State Technology Association (JEDEC) in the 1990s. These metrics are more convenient to estimate the junction temperature of devices in modern package type.
19 Δεκ 2017 · 2.3 Junction temperature The junction temperature of the MOSFET can also be monitored. Here the circuit of Figure 4 with R3=10 Ω (10 K/W) and no thermal capacity is used, as for the blue curve in in Figure 6. The MOSFET is now switched on for 1 ms.
measuring the top surface temperature is relatively easy, and a simple way of estimating the MOSFET junction temperature based on this top surface measur ement would give designers quite a useful tool.
3 Calculating the Junction Temperature When the junction-to-ambient thermal resistance ( JA) and the ambient temperature are given, you can calculate the junction temperature of the chip after calculating the power dissipated by the device, as follows: T J = P d JA + T A Where, JA = Junction-to-ambient thermal resistance T A
4 Απρ 2021 · When the power dissipation is known, it is possible to compute the junction temperature of the MOSFET. Important to take that a MOSFET installed with no heatsink has different computation strategy compared to the one with a heatsink.
With the ambient at 25°C, this allows an internal junction temperature of about 150°C. In practice most ambient temperatures are above 25°C, so less power can then be handled. For any power dissipation P (in watts), one can calculate the effective temperature differential (ΔT) in °C as: ΔT = P × θ Eq. 1.
These graphs are used to estimate the junction temperature rise due to single or repetitive power pulses. Alternatively, the ZθJC graph can also be used to estimate the MOSFET peak current capability for single or periodic pulses of current as shown in Understanding MOSFET Data Sheets, Part 4 - Pulsed Current Ratings, technical article.
