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23 ώρες πριν · Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a non-volatile memory technology with a unique combination of speed, endurance, density and ease of fabrication, which has ...
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved
26 Ιαν 2023 · Emerging materials and physical mechanisms for MRAM, such as spin–orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA), aim to achieve a better combination of speed and density than is possible with existing spin-transfer torque (STT) MRAM.
8 Απρ 2014 · We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers.
10 Ιουλ 2022 · Here, we introduce spin-orbit torque (SOT) devices to experimentally realize in-memory analog mathematical operations such as summation, subtraction, and four-quadrant multiplication, to implement the general purpose applications such as image or signal processing for edge computing.
29 Οκτ 2020 · In “Spin–orbit torque switching of a ferromagnet with picosecond electrical pulses,” researchers report using extremely short, 6-picosecond electrical pulses to switch the magnetization of a thin film in a magnetic device with great energy efficiency.
6 Σεπ 2023 · Ultrafast heating by the approximately 9 picosecond current pulse induces a thermal anisotropy torque which, in combination with the damping-like torque, coherently rotates the magnetization to obtain zero-crossing of magnetization in ~70 picoseconds.
