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Thermal characterization parameter, such as ΨJT and ΨJB, are the thermal metrics defined by the Solid State Technology Association (JEDEC) in the 1990s. These metrics are more convenient to estimate the junction temperature of devices in modern package type.
3 Calculating the Junction Temperature When the junction-to-ambient thermal resistance ( JA) and the ambient temperature are given, you can calculate the junction temperature of the chip after calculating the power dissipated by the device, as follows: T J = P d JA + T A Where, JA = Junction-to-ambient thermal resistance T A
Junction temperature is calculated by using the above thermal resistance. ΔT j [deg.C]＝ R th (j-a) [deg.C/W] × P LOSS [W] T j = ΔT j + T a. ΔT j: Junction temperature rise. R th (j-a): Thermal resistance, junction to ambient. P LOSS: Power dissipation in semiconductor device. T j: Junction temperature.
19 Δεκ 2017 · 2.3 Junction temperature The junction temperature of the MOSFET can also be monitored. Here the circuit of Figure 4 with R3=10 Ω (10 K/W) and no thermal capacity is used, as for the blue curve in in Figure 6. The MOSFET is now switched on for 1 ms.
Junction temperature, T J is estimated from the measured values of loss and case temperature, T C during the power MOSFET/IGBT operation and the thermal resistance, R θJC described in the electrical characteristics of the data sheet. T J is calculated by the following equations. T J = P × R θJC + T C. Where:
With the concept “junction temperature”, it is assumed that the die’s temperature is uniform across its top surface; in other words, the whole die’s surface has the same temperature. This is a simplified approach because it ignores the fact that x-axis and y-axis thermal
30 Μαρ 2012 · The junction temperature of power MOSFETs is one of the major criteria used to obtain temperature derating curves for power converters.
