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Gallium nitride. Molecular formula: GaN. Average mass: 83.730. Monoisotopic mass: 82.928648. ChemSpider ID: 105057.
gallium nitride. Formula: GaN. Molecular weight: 83.730. IUPAC Standard InChI: InChI=1S/Ga.N. IUPAC Standard InChIKey: JMASRVWKEDWRBT-UHFFFAOYSA-N. CAS Registry Number: 25617-97-4. Chemical structure: This structure is also available as a 2d Mol file. Permanent link for this species. Use this link for bookmarking this species for future reference.
Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure.
Number of atoms in 1 cm 3. 8.9·10 22. Debye temperature. 600 K. Density. 6.15 g cm -3. 300 K.
Gallium nitride (Ga N) is a direct-bandgap semiconductor material of wurtzite crystal structure with a wide (3.4 eV) band gap, used in optoelectronic, high-power and high-frequency devices. It is a binary group III/group V direct bandgap semiconductor.
23 Νοε 2023 · Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs).
Abstract. The fundamental thermal and optical properties of gallium nitride are presented in this chapter. The spectral emissivity of gallium nitride is briefly described. License Information. This article is available under the terms of the IOP-Standard Books License.
