Αποτελέσματα Αναζήτησης
1 Απρ 2022 · Our review of the GSST material provides a broad view of its importance, properties, and applications in optoelectronic devices. The GSST materials are the most suitable chalcogenide phase change materials (Ch-PCMs) compared to the most popular Ge-Sb-Te (GST) materials.
1 Απρ 2022 · Our review of the GSST material provides a broad view of its importance, properties, and applications in optoelectronic devices. The GSST materials are the most suitable chalcogenide phase change materials (Ch-PCMs) compared to the most popular Ge-Sb-Te (GST) materials.
1 Οκτ 2021 · Phase change of GSST thin film using 1550 nm laser source has been studied. Phase change can be achieved with laser intensity between 0.4 GW/cm 2 and 0.9 GW/cm 2. Low absorption coefficient of amorphous phase GSST at 1550 nm requires high intensity laser source to induce phase change.
29 Οκτ 2018 · In this paper, we propose and optimise a nonvolatile and ultra-low-loss RMDS via a triple-waveguide directional coupler (DC) with the GSST-PCM and a two-waveguide DC.
30 Σεπ 2019 · GSST possesses an unprecedented broadband optical transparency and exceptionally large FOM throughout almost the entire infrared spectrum. The material therefore represents a new class of O-PCMs...
12 Απρ 2018 · Phase change materials such as pseudobinary GeTe-Sb 2 Te 3 (GST) alloys are an essential part of existing and emerging technologies. Here, we investigate the electrical and optical properties...
30 Δεκ 2022 · The results show that innovation in research themes of the ES research in the GSST field is increasing rapidly in 2015–2018, while innovation in research themes is decreasing in 2018–2021.