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One important source of reduced reliability is the phenomenon of program interference: when a flash cell is programmed to a value, the programming operation affects the threshold voltage of not only that cell, but also the other cells surrounding it.
7 Νοε 2013 · A new model is developed that predicts the amount of program interference as a function of threshold voltage values and changes in neighboring cells and can reduce the raw flash bit error rate by 64% and thereby improve flash lifetime by 30%.
17 Ιαν 2020 · In working memory (WM), successful maintenance of information is affected by interference. Older adults may be especially susceptible to the effects of interference, which may cause age-related cognitive impairments.
1 Νοε 2003 · In this article, I argue that we should reconsider the long-standing conceptualization of interference as a learning phenomenon and reframe interference as arising from systems that achieve mental and behavioral control.
As NAND flash memory continues to scale down to smaller process technology nodes, its reliability and endurance are degrading. One important source of reduced reliability is the phenomenon ofprogram interference: when a flash cell is programmed to a value, the programming operation affects the threshold voltage of not only that cell, but also the other cells surrounding it. This ...
During interference, a specific memory interferes with items that were learned before memory acquisition (i.e., proactive interference) or after it (i.e., retroactive interference).
The extent to which one can use cognitive resources to keep information in working memory is known to rely on (1) active maintenance of target representations and (2) downregulation of interference from irrelevant representations.
