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26 Ιαν 2023 · Emerging materials and physical mechanisms for MRAM, such as spin–orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA), aim to achieve a better combination of speed and density than is possible with existing spin-transfer torque (STT) MRAM.
21 ώρες πριν · Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a non-volatile memory technology with a unique combination of speed, endurance, density and ease of fabrication, which has ...
13 Ιουν 2018 · In-memory computing is an approach that attempts to address this issue by designing systems that compute within the memory, thus eliminating the energy-intensive and time-consuming data...
10 Ιουλ 2022 · In-memory computing (IMC) offers a high performance and energy-efficient computing paradigm. To date, in-memory analog arithmetic operations with emerging nonvolatile devices are usually implemented using discrete components, which limits the scalability and blocks large scale integration.
8 Μαρ 2021 · Spin-torque memristors are proposed in 2009, and can provide fast, low-power, and infinite memristive behavior for neuromorphic computing and large-density non-volatile memory.
8 Απρ 2014 · We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers.
Reluctance torque is the torque generated because the motor is moving to a position where the reluctance seen by the armature flux is declining. A simple application of this principle is the refrigerator magnet, which is held in place by reluctance force.
