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According to the electronic design rules, every 10°C rise in temperature reduces the average life by 50%, so it is important to properly evaluate the thermal stress or junction temperature of the semiconductor devices.
Junction temperature is calculated by using the above thermal resistance. ΔT j [deg.C]＝ R th (j-a) [deg.C/W] × P LOSS [W] T j = ΔT j + T a. ΔT j: Junction temperature rise. R th (j-a): Thermal resistance, junction to ambient. P LOSS: Power dissipation in semiconductor device. T j: Junction temperature.
4 Απρ 2021 · When the power dissipation is known, it is possible to compute the junction temperature of the MOSFET. Important to take that a MOSFET installed with no heatsink has different computation strategy compared to the one with a heatsink.
19 Δεκ 2017 · maximum current to 100 A and V1 switches the MOSFET on for 1 s. Tj (junction temperature) and Tcase (case temperature) are the terminals for the temperatures. V3 sets the ambient temperature to 25°C. At Tcase and Tj a potential difference of 1 V equals 1 K and an external voltage of 0 V equals 0°C. The models are not limited to positive values.
The iterative process starts by first assuming a junction temperature for each MOSFET, then calculating each MOSFET's individual power dissipation and allowable ambient temperature. The process ends when the allowable ambient air temperature is at, or slightly above the expected maximum temperature within the enclosure that houses the power ...
30 Μαρ 2012 · This article describes an improved technique for determining MOSFET junction temperature and switching losses more accurately based on the given thermal resistances and lead and case...
measuring the top surface temperature is relatively easy, and a simple way of estimating the MOSFET junction temperature based on this top surface measur ement would give designers quite a useful tool.
